Tranzijentna spektroskopija manjinskih nosioca

master's thesis

• Title (english): Minority carriers transient spectroscopy
• Author: Gabrijela Markota
• Mentor: Ivana Capan (mentor)
• Mentor: Ivan Kokanović (komentor)
• Committee member: Ivana Capan (predsjednik povjerenstva)
• Committee member: Ivica Smolić (član povjerenstva)
• Committee member: Emil Tafra (član povjerenstva)
• Committee member: Hrvoje Buljan (član povjerenstva)
• Committee member: Ivan Kokanović (član povjerenstva)
• Granter: University of Zagreb; Faculty of Science; (Department of Physics); Zagreb
• Defense date and country: 2020-06-15, Croatia
• Scientific / art field, discipline and subdiscipline: NATURAL SCIENCES; Physics

Abstract

O ovom radu se proučavaju zamke za manjinske nosioce na n-tipu 4H-SiC Schottky diode. U prvom dijelu rada fokus je na silicij-karbidu (SiC) kao materijalu i na njegovim fizikalnim i električnim svojstvima. Primjena SiC u modernom svijetu je sve veća i sve šira upravo zbog njegovih izuzetnih svojstava o kojima se govori u tekstu ovog rada. Proučavanje manjinskih nosioca unutar n-tipa 4H-SiC polupropusne Schottky diode se vrši metodom tranzijentne spektroskopije manjinskih nosioca (engl. minority carrier transient spectroscopy, MCTS) koja je, za razliku od do sada najčešće korištene DLTS (engl. deep level transient spectroscopy) metode, usredotočena na proučavanje upravo manjinskih nosioca te za otkrivanje zamki za manjinske nosioce koristi optičku pobudu umjesto električnog pulsa koji se koristi pri DLTS mjerenjima. Ovo istraživanje je provedeno na Institutu Ruđer Bošković u sklopu Laboratorija za poluvodiče, Zavod za fiziku materijala, korištenjem uredaja za MCTS spektroskopiju. Kvaliteta Schottky diode je testirana strujno-naponskim (I-V) i kapacititivno-naponskim (C-V) mjerenjima. Nakon analize mjerenja i rezultata, na MCTS spektru se ističu dva dominantna vrha koja prepoznajemo kao supstitucijske primjese bora na mjestima silicija (vrh B) i ugljika (vrh D) unutar kristalne rešetke. Energija za vrh B je na E_V + 0.21 eV, dok je energija za vrh D na E_V + 0.62 eV. Dakle, B i D vrh pridijeljen je supstitucijskoj primjesi bora na silicijevom B_Si i ugljikovom B_C mjestu u kristalnoj rešetci.

Abstract (english)

In this work minority carrier traps in as-grown n-type 4H-SiC Schottky barrier diode (SBD) are studied. In the first part of the work the main focus is on silicon carbide (SiC) as a material and on its physical and electrical characteristics. Application of SiC in the modern world is getting more and more broad and wide every day mainly because of exceptional characteristics that are mentioned in this paper. Minority carriers in as-grown n-type 4H-SiC semi-transparent SBD are studied by MCTS (minority carrier transient spectroscopy) method which is, in comparison with until recently most commonly used DLTS (deep level transient spectroscopy) method, focused on studying specifically minority carriers and it is using optical excitation for detection of minority carrier traps instead of electric pulse which is used in DLTS measurements. This study was carried out at Ruđer Bošković Institute as a part of Laboratory for semiconductors, Division of Materials Physics using MCTS device. The quality of SBD was investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. After the analysis of measurements and results two peaks are dominant on the MCTS spectrum which we recognize as substitutional boron incorporation on Si sites (peak B) and C sites (peak D) inside of crystal lattice. Peak B activation energy was on E_V + 0.21 eV, while peak D activation energy was on E_V + 0.62 eV. Therefore, B and D peaks are assigned to boron substitutional incorporation on silicon B_Si site and carbon B_C site inside crystal lattice.

• Keywords: manjinski nosioci; silicij-karbid (SiC); Schottky dioda; defekti; metoda tranzijentne spektroskopije manjinskih nosioca (MCTS); zamke za manjinske nosioce
• Keywords (english): minority carriers; silicon carbide (SiC); Schottky barrier diode; defects; minority carrier transient spectroscopy (MCTS); minority carrier traps
• Language: croatian
• URN:NBN: urn:nbn:hr:217:927252
• Study programme: Title: Physics; specializations in: Research; Course: Research; Study programme type: university; Study level: integrated undergraduate and graduate; Academic / professional title: magistar/magistra fizike (magistar/magistra fizike)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Open access
• Created on: 2021-02-01 11:29:11