prikaz prve stranice dokumenta Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
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Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
Materials, 16 (2023), 9; 3347. https://doi.org/10.3390/ma16093347
Knezevic, Tihomir; Jelavić, Eva; Yamazaki, Yuichi; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana

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Knezevic, T., Jelavić, E., Yamazaki, Y., Ohshima, T., Makino, T. i Capan, I. (2023). Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials, 16. (9). doi: 10.3390/ma16093347

Knezevic, Tihomir, et al. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials, vol. 16, br. 9, 2023. https://doi.org/10.3390/ma16093347

Knezevic, Tihomir, Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino i Ivana Capan. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials 16, br. 9 (2023). https://doi.org/10.3390/ma16093347

Knezevic, T., et al. (2023) 'Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes', Materials, 16(9). doi: 10.3390/ma16093347

Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I. Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials [Internet]. 25.04.2023. [pristupljeno 03.12.2024.];16(9). doi: 10.3390/ma16093347

T. Knezevic, E. Jelavić, Y. Yamazaki, T. Ohshima, T. Makino i I. Capan, "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes", Materials, vol. 16, br. 9, Travanj 2023. [Online]. Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:043239. [Citirano: 03.12.2024.]

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Podaci o radu
Naslov (engleski)Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
AutorTihomir Knezevic
AutorEva Jelavić
AutorYuichi Yamazaki
AutorTakeshi Ohshima
AutorTakahiro Makino
AutorIvana Capan
Autorova ustanovaSveučilište u Zagrebu
Prirodoslovno-matematički fakultet
(Fizički odsjek)
Znanstveno / umjetničko
područje, polje i grana		PRIRODNE ZNANOSTI
Fizika
Sažetak (engleski)
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 1015 cm−3. Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.
Ključne riječi (engleski)
Jezikengleski
Vrsta publikacijeZnanstveni rad - Izvorni znanstveni rad
Status objaveObjavljen
Vrsta recenzijeRecenziran - međunarodna recenzija
Verzija publikacijeObjavljena verzija rada (izdavačev PDF)
Naslov časopisaMaterials
Brojčani podacivol. 16, br. 9, 3347
e-ISSN1996-1944
DOIhttps://doi.org/10.3390/ma16093347
URN:NBNurn:nbn:hr:217:043239
Datum objave publikacije2023-04-25
URL dokumentahttps://www.mdpi.com/1996-1944/16/9/3347
Vrsta resursaTekst
Prava pristupaOtvoreni pristup
Uvjeti korištenjaIkona licence Imenovanje 4.0 međunarodna (CC BY 4.0)
Javna napomena© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Received: 27 March 2023. Revised: 20 April 2023. Accepted: 24 April 2023. Published: 25 April 2023.
Datum i vrijeme pohrane2024-07-22 11:59:48