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Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
Materials, 16 (2023), 9; 3347. https://doi.org/10.3390/ma16093347

Knezevic, Tihomir; Jelavić, Eva; Yamazaki, Yuichi; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana

Citirajte ovaj rad

Knezevic, T., Jelavić, E., Yamazaki, Y., Ohshima, T., Makino, T. i Capan, I. (2023). Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials, 16. (9). doi: 10.3390/ma16093347

Knezevic, Tihomir, et al. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials, vol. 16, br. 9, 2023. https://doi.org/10.3390/ma16093347

Knezevic, Tihomir, Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino i Ivana Capan. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials 16, br. 9 (2023). https://doi.org/10.3390/ma16093347

Knezevic, T., et al. (2023) 'Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes', Materials, 16(9). doi: 10.3390/ma16093347

Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I. Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials [Internet]. 25.04.2023. [pristupljeno 24.12.2024.];16(9). doi: 10.3390/ma16093347

T. Knezevic, E. Jelavić, Y. Yamazaki, T. Ohshima, T. Makino i I. Capan, "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes", Materials, vol. 16, br. 9, Travanj 2023. [Online]. Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:043239. [Citirano: 24.12.2024.]

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