Znanstveni rad - Izvorni znanstveni rad
Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3
Physical Review B, 94 (2016), 16; https://doi.org/10.1103/PhysRevB.94.161105

Pinterić, M.; Lazić, P.; Pustogow, A.; Ivek, T.; Kuveždić, Marko; Milat, Ognjen; Gumhalter, Branko; Basletić, Mario; Čulo, Matija; Korin-Hamzić, Bojana; Lohle, A.; Hubner, R.; Sanz Alonso, M.; Hiramatsu, T.; Yoshida, Y.; Saito, G.; Dressel, M.; Tomić, S. Više autora...

Citirajte ovaj rad

Pinterić, M., Lazić, P., Pustogow, A., Ivek, T., Kuveždić, M., Milat, O. ... Tomić, S. (2016). Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3. Physical Review B, 94. (16). doi: 10.1103/PhysRevB.94.161105

Pinterić, M., et al. "Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3." Physical Review B, vol. 94, br. 16, 2016. https://doi.org/10.1103/PhysRevB.94.161105

Pinterić, M., P. Lazić, A. Pustogow, T. Ivek, Marko Kuveždić, Ognjen Milat, Branko Gumhalter, et al. "Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3." Physical Review B 94, br. 16 (2016). https://doi.org/10.1103/PhysRevB.94.161105

Pinterić, M., et al. (2016) 'Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3', Physical Review B, 94(16). doi: 10.1103/PhysRevB.94.161105

Pinterić M, Lazić P, Pustogow A, Ivek T, Kuveždić M, Milat O, i sur.. Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3. Physical Review B [Internet]. 2016. [pristupljeno 25.10.2020.];94(16). doi: 10.1103/PhysRevB.94.161105

M. Pinterić, et al., "Anion effects on electronic structure and electrodynamic properties of the Mott insulator κ-(BEDT-TTF)2Ag2(CN)3", Physical Review B, vol. 94, br. 16, 2016. [Online]. Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:709788. [Citirano: 25.10.2020.]

Prijavite se u repozitorij kako biste mogli spremiti objekt u svoju listu.