Kapacitivna tranzijentna spektroskopija za proučavanje defekata uvedenih ionskom implantacijom

master's thesis

• Title (english): Capacitance transient spectroscopy study of defects introduced by ion implantation
• Author: Luka Bakrač
• Mentor: Ivana Capan (mentor)
• Mentor: Ivan Kokanović (komentor)
• Committee member: Ivan Kokanović (predsjednik povjerenstva)
• Committee member: Ivana Capan (član povjerenstva)
• Committee member: Ivica Smolić (član povjerenstva)
• Committee member: Emil Tafra (član povjerenstva)
• Committee member: Hrvoje Buljan (član povjerenstva)
• Granter: University of Zagreb; Faculty of Science; (Department of Physics); Zagreb
• Defense date and country: 2020-09-30, Croatia
• Scientific / art field, discipline and subdiscipline: NATURAL SCIENCES; Physics

Abstract

U ovom radu proučena je otpornost silicij karbida na uvođenje defekata ozračivanjem ionima. Za karakterizaciju su korištene Schottky diode napravljene na n-tipu 4H politipa silicij karbida (4H-SiC). Diode su karakterizirane strujno-naponskim i kapacitivno-naponskim mjerenjima, a duboki nivoi karakterizirani su tranzijentnom spektroskopijom dubokih nivoa (DLTS). Proučen je utjecaj ozračivanja dioda ionima helija, ugljika i kisika različitih doza i energija. Kod svih proučenih doza i vrsta iona nisu zapažene promjene strujno-naponske karakteristike, dok kapacitivno-naponske karakteristike pokazuju kompenzaciju slobodnih nosioca naboja uzrokovanu uvođenjem dubokih nivoa. Kod svih dioda uočen je duboki nivo Z1/2 koji odgovara defektu vakancije ugljika što znači da je prisutan i prije ozračivanja. Ozračivanjem je uočena pojava dva dodatna duboka nivoa EH1 i EH3 koji odgovaraju različitim prijelazima stanja defekta vakancije silicija.

Abstract (english)

This work presents the influence of ion radiation on the introduction of defects in silicon carbide. Schottky diodes made on n-type 4H polytype silicon carbide (4H-SiC) were used for the characterization. Diodes were characterized by current-voltage and capacitance voltage measurements. Deep levels were characterized by deep level transient spectroscopy (DLTS). The influence of irradiation of diodes with helium, carbon, and oxygen ions of different doses and energies was studied. No changes in current-voltage characteristics were observed at all studied doses and ion types, while capacitance-voltage characteristics showed compensation of free charge carriers caused by the introduction of deep levels. In all diodes, a deep level Z1/2 was observed, which corresponds to the defect of carbon vacancy, which means that it is present even before irradiation. Irradiation introduced two additional deep levels - EH1 and EH3 corresponding to different state transitions of the silicon vacancy defect.

• Keywords: ionska implantacija; intrinzični defekti; SiC; tranzijentna spektroskopija dubokih nivoa
• Keywords (english): ion implantation; intrinsic defects; SiC; deep level transient spectroscopy
• Language: croatian
• URN:NBN: urn:nbn:hr:217:618156
• Study programme: Title: Physics; specializations in: Research; Course: Research; Study programme type: university; Study level: integrated undergraduate and graduate; Academic / professional title: magistar/magistra fizike (magistar/magistra fizike)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Open access
• Created on: 2021-01-19 08:33:16