Uloga bora kao neželjene primjese u n-tipu SiC

master's thesis

• Title (english): The role of boron as unwanted impurity in n-type SiC
• Author: Eva Jelavić
• Mentor: Ivana Capan (mentor)
• Mentor: Ivan Kokanović (komentor)
• Committee member: Ivan Kokanović (predsjednik povjerenstva)
• Committee member: Ivana Capan (član povjerenstva)
• Committee member: Denis Sunko (član povjerenstva)
• Committee member: Mario Basletić (član povjerenstva)
• Committee member: Damir Pajić (član povjerenstva)
• Granter: University of Zagreb; Faculty of Science; (Department of Physics); Zagreb
• Defense date and country: 2023-09-27, Croatia
• Scientific / art field, discipline and subdiscipline: NATURAL SCIENCES; Physics

Abstract

U ovom radu proučavan je n-tip silicijevog karbida dopiran dušikom te defekti nastali u materijalu. Korištena je polupropusna Schottkyjeva dioda napravljena na n tipu 4H silicijevog karbida u koju je tijekom rasta kristala nenamjerno unesen bor. Za karakterizaciju diode napravljena su mjerenja ovisnosti struje o naponu te kapaciteta o naponu dok su za proučavanje nosioca naboja korištene metode tranzijentne spektroskopije. Duboki nivoi karakterizirani su tranzijentnom spektroskopijom dubokih nivoa (DLTS, eng. Deep Level Transient Spectroscopy) dok su zamke za manjinske nosioce naboja promatrane tranzijentnom spektroskopijom manjinskih nosioca na boja (MCTS, eng. Minority Carrier Transient Spectroscopy). Iz strujno-naponske karakteristike dobiven je faktor idealnosti diode, a iz kapacitivno-naponske ukupna koncentracija dopiranja. Kod DLTS mjerenja uočen je vrh Z1/2 koji označava duboki nivo nastao vakancijom ugljika. U MCTS spektru uočena su četiri vrha od kojih su dva dobro poznata i nazivaju se B i D-centar. B odgovara defektima nastalim supstitucijom bora na mjestu silicija dok D-centar označava nivoe nastale zbog supstitucije bora na mjestu ugljika. Druga dva vrha nazvana su X i Y te ih je potrebno dodatno istražiti.

Abstract (english)

In this paper, the nitrogen-doped n-type silicon carbide and the defects formed in the material are studied. A semiconductive Schottky diode made on the n-type 4H silicon carbide was used, into which boron was unintentionally introduced during crystal growth. To characterize the diode, measurements were performed to analyze the current-voltage and the capacitance-voltage dependency. Transient spectroscopy methods were employed to study charge carriers, with Deep Level Transient Spectroscopy (DLTS) used to characterize deep levels, and Minority Carrier Transient Spectroscopy (MCTS) utilized to observe traps for minority charge carriers. The diode’s ideality factor was obtained from the current-voltage characteristic, while the total doping concentration was derived from the capacitance-voltage characteristic. In DLTS measurements, a peak Z1/2 was observed, indicating a deep level created by a carbon vacancy. The MCTS spectrum revealed four peaks, two of which are well-known and denoted as B and D-center. B corresponds to defects caused by boron substitution for silicon, while D-center designates levels arising from boron substitution for carbon. The other two peaks are labeled as X and Y and remain to be further explored.

• Keywords: silicijev karbid; duboki energetski nivoi; defekti; tranzijentna spektroskopija dubokih nivoa; tranzijentna spektroskopija manjinskih nosioca naboja
• Keywords (english): silicon carbide; deep energy levels; defects; deep level transient spectroscopy; minority carrier transient spectroscopy
• Language: croatian
• URN:NBN: urn:nbn:hr:217:752340
• Study programme: Title: The University Integrated Undergraduate and Graduate Programme in Physics; Research Physics; specializations in: Research Physics; Course: Research Physics; Study programme type: university; Study level: integrated undergraduate and graduate; Academic / professional title: sveučilišni magistar fizike (sveučilišni magistar fizike)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Open access
• Created on: 2024-01-30 13:48:42