prikaz prve stranice dokumenta Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
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Scientific paper - Original scientific paper
Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
Materials, 16 (2023), 9; 3347. https://doi.org/10.3390/ma16093347
Knezevic, Tihomir; Jelavić, Eva; Yamazaki, Yuichi; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana

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Knezevic, T., Jelavić, E., Yamazaki, Y., Ohshima, T., Makino, T. & Capan, I. (2023). Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials, 16. (9). doi: 10.3390/ma16093347

Knezevic, Tihomir, et al. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials, vol. 16, no. 9, 2023. https://doi.org/10.3390/ma16093347

Knezevic, Tihomir, Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino and Ivana Capan. "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes." Materials 16, no. 9 (2023). https://doi.org/10.3390/ma16093347

Knezevic, T., et al. (2023) 'Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes', Materials, 16(9). doi: 10.3390/ma16093347

Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I. Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. Materials [Internet]. 2023 April 25 [cited 2024 December 03];16(9). doi: 10.3390/ma16093347

T. Knezevic, E. Jelavić, Y. Yamazaki, T. Ohshima, T. Makino and I. Capan, "Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes", Materials, vol. 16, no. 9, April 2023. [Online]. Available at: https://urn.nsk.hr/urn:nbn:hr:217:043239. [Accessed: 03 December 2024]

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Metadata
Title (english)Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
AuthorTihomir Knezevic
AuthorEva Jelavić
AuthorYuichi Yamazaki
AuthorTakeshi Ohshima
AuthorTakahiro Makino
AuthorIvana Capan
Author's institutionUniversity of Zagreb
Faculty of Science
(Department of Physics)
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract (english)
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 1015 cm−3. Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.
Keywords (english)
Languageenglish
Publication typeScientific paper - Original scientific paper
Publication statusPublished
Peer reviewPeer review - international
Publication versionPublished version
Journal titleMaterials
Numberingvol. 16, no. 9, 3347
e-ISSN1996-1944
DOIhttps://doi.org/10.3390/ma16093347
URN:NBNurn:nbn:hr:217:043239
Publication2023-04-25
Document URLhttps://www.mdpi.com/1996-1944/16/9/3347
Type of resourceText
Access conditionsOpen access
Terms of useLicence Attribution 4.0 International (CC BY 4.0) icon
Public note© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Received: 27 March 2023. Revised: 20 April 2023. Accepted: 24 April 2023. Published: 25 April 2023.
Created on2024-07-22 11:59:48