Znanstveni rad - Izvorni znanstveni rad
General theory of intraband relaxation processes in heavily doped graphene
Physical review B: Condensed matter and materials physics, 91 (2015), 20; https://doi.org/10.1103/PhysRevB.91.205428


Citirajte ovaj rad

Kupčić, I. (2015). General theory of intraband relaxation processes in heavily doped graphene. Physical review B: Condensed matter and materials physics, 91. (20). doi: 10.1103/PhysRevB.91.205428

Kupčić, Ivan. "General theory of intraband relaxation processes in heavily doped graphene." Physical review B: Condensed matter and materials physics, vol. 91, br. 20, 2015. https://doi.org/10.1103/PhysRevB.91.205428

Kupčić, Ivan. "General theory of intraband relaxation processes in heavily doped graphene." Physical review B: Condensed matter and materials physics 91, br. 20 (2015). https://doi.org/10.1103/PhysRevB.91.205428

Kupčić, I. (2015) 'General theory of intraband relaxation processes in heavily doped graphene', Physical review B: Condensed matter and materials physics, 91(20). doi: 10.1103/PhysRevB.91.205428

Kupčić I. General theory of intraband relaxation processes in heavily doped graphene. Physical review B: Condensed matter and materials physics [Internet]. 2015. [pristupljeno 19.11.2020.];91(20). doi: 10.1103/PhysRevB.91.205428

I. Kupčić, "General theory of intraband relaxation processes in heavily doped graphene", Physical review B: Condensed matter and materials physics, vol. 91, br. 20, 2015. [Online]. Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:179348. [Citirano: 19.11.2020.]

Prijavite se u repozitorij kako biste mogli spremiti objekt u svoju listu.