Depolarization crossovers in the microwave response of silicon crystals in slab geometry

Scientific paper - Original scientific paper

• Author: Bakir Babić
• Author: Mario Basletić
• Author: Antonije Dulčić
• Author: Miroslav Požek
• Author's institution: University of Zagreb; Faculty of Science; (Department of Physics)
• Scientific / art field, discipline and subdiscipline: NATURAL SCIENCES; Physics

Abstract (english)

Microwave cavity perturbation measurements have been performed on several n-type silicon samples with different depolarization factors due to sample geometries. The general solution for the complex frequency shift in slab geometry is discussed for the specific case of semiconductors. The depolarization crossovers predicted by the theory have been experimentally observed. Their relative intensities suggest that the imaginary part of the complex conductivity of semiconductors has to be taken into account. Electron scattering time has been inferred from the microwave measurements.

• Keywords (english): n-type silicon; slab geometry; microwave measurement; complex frequency shift; depolarization factors; electron scattering time
• Language: english
• Publication type: Scientific paper - Original scientific paper
• Publication status: Published
• Peer review: Peer review
• Publication version: Published version
• Journal title: Fizika A
• Numbering: vol. 15, no. 1, pp. 25-34
• p-ISSN: 1330-0008
• URN:NBN: urn:nbn:hr:217:936843
• Publication: 2006
• Document URL: http://fizika.hfd.hr/fizika_a/av06/a15p025.htm
• Type of resource: Text
• Access conditions: Open access
• Created on: 2019-10-15 14:39:44